BIBLIO is the largest independent book marketplace in the world, with over 100 million books.

Skip to content

Physics And Modeling Of Mosfets, The: Surface-Potential Model Hisim (International Advances in Solid State Electronics and Technology)

Physics And Modeling Of Mosfets, The: Surface-Potential Model Hisim (International Advances in Solid State Electronics and Technology)

Physics And Modeling Of Mosfets, The: Surface-Potential Model Hisim
Stock photo: cover may vary

Physics And Modeling Of Mosfets, The: Surface-Potential Model Hisim (International Advances in Solid State Electronics and Technology) Paperback - 2008

by Miura-Mattausch, Mitiko

Add to wish list
  • Used
  • Good
  • Paperback
Used - Good

Description

paperback. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book.
Ask the seller a question Add to wish list
A$153.96
Free Delivery within USA
Standard delivery: 7 to 14 days
More delivery options
Dropship order
Ships from Bonita (California, United States)

Details

About Bonita California, United States

Biblio member since 2020

Terms of Sale: 30 day return guarantee, with full refund including original shipping costs for up to 30 days after delivery if an item arrives misdescribed or damaged.

Browse books from Bonita

Reader reviews for Physics And Modeling Of Mosfets, The: Surface-Potential Model Hisim (International Advances in Solid State Electronics and Technology)

From the publisher

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

tracking-