BIBLIO is the largest independent book marketplace in the world, with over 100 million books.

Skip to content

Reverse Graded Buffers for CMOS Technologies: Reverse Graded High Content (x>0.75) Si(1-x)Ge(x) Virtual Substrates

Reverse Graded Buffers for CMOS Technologies: Reverse Graded High Content (x>0.75) Si(1-x)Ge(x) Virtual Substrates

Reverse Graded Buffers for CMOS Technologies: Reverse Graded High Content
Stock photo: cover may vary

Reverse Graded Buffers for CMOS Technologies: Reverse Graded High Content (x>0.75) Si(1-x)Ge(x) Virtual Substrates Paperback - 2010

by Shah, Vishal Ajit

Add to wish list
  • Used
  • Good
  • Paperback
Used - Good

Description

paperback. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book.
Ask the seller a question Add to wish list
A$212.61
Free Delivery within USA
Standard delivery: 7 to 14 days
More delivery options
Dropship order
Ships from Bonita (California, United States)

Details

About Bonita California, United States

Biblio member since 2020

Terms of Sale: 30 day return guarantee, with full refund including original shipping costs for up to 30 days after delivery if an item arrives misdescribed or damaged.

Browse books from Bonita

Reader reviews for Reverse Graded Buffers for CMOS Technologies: Reverse Graded High Content (x>0.75) Si(1-x)Ge(x) Virtual Substrates

From the publisher

Moore's law suggests that the number of transistors which can be economically fabricated on a chip exponentially increases with time, traditionally this has been done by simple scaling of the channel within metal oxide semiconductor field effect transistors (MOSFETs). However, this approach is fast reaching fundamental limitations, which necessitates the substitution of different materials in traditional silicon devices to enhance their performance. A high composition (x>0.75) Si1-xGex alloy layer can be used as a buffer layer for such materials. However, buffers normally consist of a trade-off between structural quality factors and the physical attributes of any active channel layer are directly affected by those of the buffer which must not compromise device performance. In this work, a good quality high Ge composition SiGe buffer is investigated and is compared to more popular buffer fabrication techniques. All aspects from epitaxial growth to structural characterisation are explained from basic principles and should be useful for anyone in the semiconductor industry to gain a grasp of structural analysis which is typical for this field of research.
tracking-