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Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability Hardback - 2002
by David J. Dumin (Editor)
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From the publisher
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The metal-oxide-semiconductor (MOS) transistor was invented in 1960 [1, 2].
Details
- Title Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability
- Author David J. Dumin (Editor)
- Binding Hardback
- Pages 280
- Volumes 1
- Language ENG
- Publisher World Scientific Publishing Company
- Publication date January 31, 2002
- ISBN 9789810248420 / 9810248423
- Weight 1.38 lbs (0.63 kg)
- Dimensions 10.08 x 6.7 x 0.77 in (25.60 x 17.02 x 1.96 cm)
- Category Technology & Industrial Arts
- Library of Congress Catalogue Number 2002279812
- Dewey Decimal Code 621
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OXIDE RELIABILITY: A SUMMARY OF SILICON OXIDE WEAROUT, BREAKDOWN, AND RELIABILITY VOL-23
by DUMIN
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Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability (Selected Topics in Electronics and Systems)
by Dumin, David J (Editor)
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- Hardback
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Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability (Selected Topics in Electronics and Systems)
by Dumin, David J (Editor)
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- Hardback
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- 9789810248420 / 9810248423
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